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| SSG4575 Elektronische Bauelemente Enhancement Mode Power Mos.FET RoHS Compliant Product N Channel 6A, 60V,RDS(ON) 36m[ P Channel -4.2A, - 60V,RDS(ON) 72m[ SOP-8 Description 0.40 0.90 0.19 0.25 45 o The SSG4575 provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The SOP-8 package is universally preferred for all commercial industrial surface mount application and suited for low voltage applications such as DC/DC converters. 0.35 0.49 1.27Typ. 0.375 REF 6.20 5.80 0.25 3.80 4.00 4.80 5.00 0.10~0.25 0 o 8 o 1.35 1.75 Features * Simple Drive Requirement * Lower On-resistance D1 8 D1 7 D2 6 D2 5 Dimensions in millimeters D1 D2 * Fast Switching Performance Date Code 4575SS G1 S1 G2 1 S1 2 G1 3 S2 4 G2 S2 Absolute Maximum Ratings Parameter Drain-Source Voltage www..com Gate-Source Voltage Symbol VDS VGS Ratings N-Channel 60 20 P-Channel -60 20 -4.2 -3.3 -30 2 Unit V V A A A W W/ C o o Continuous Drain Current Continuous Drain Current Pulsed Drain Current 1 3 ID@TA=25 C ID@TA=70 C IDM PD@TA=25 C o o o 6 4.7 30 3 Total Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range 0.016 Tj, Tstg -55~+150 C Thermal Data Parameter Thermal Resistance Junction-ambient 3 Symbol Rthj-a Ratings 62.5 Unit o C /W http://www.SeCoSGmbH.com/ Any changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 1 of 7 SSG4575 Elektronische Bauelemente Enhancement Mode Power Mos.FET o N Channel 6A, 60V,RDS(ON) 36m[ P Channel -4.2A, - 60V,RDS(ON) 72m[ Electrical Characteristics N Channel( Tj=25 C Parameter Drain-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Gate Threshold Voltage Gate-Source Leakage Current Drain-Source Leakage Current (Tj=25oC) Drain-Source Leakage Current (Tj=70 C) Static Drain-Source On-Resistance 2 o Unless otherwise specified) Typ. _ Symbol BVDSS BVDS/ Tj Min. 60 _ Max. _ _ Unit V V/ C V nA uA uA o Test Condition VGS=0V, ID=250uA Reference to 25 C, ID=1mA VDS=VGS, ID=250uA VGS= 20V VDS=60V,VGS=0 VDS=48V,VGS=0 VGS=10V, ID=5A VGS=4.5V, ID=3A o 0.04 _ _ _ _ _ _ VGS(th) IGSS IDSS 1.0 _ _ _ _ 3.0 100 1 25 36 42 29 _ _ RDS(ON) Qg Qgs Qgd Td(ON) Tr Td(Off) Tf Ciss Coss Crss Gfs _ _ _ _ _ _ _ _ _ _ _ m [ Total Gate Charge 2 18 5 10 10 6 32 10 1670 160 117 8 Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time 2 Rise Time Turn-off Delay Time Fall Time www..com Input Capacitance Output Capacitance Reverse Transfer Capacitance Forward Transconductance nC ID=5A VDS=48V VGS=4.5V _ _ _ _ VDD=30V ID=1A nS VGS=10V RG=3.3[ RD=30 [ 2670 _ _ pF VGS=0V VDS=25V f=1.0MHz _ _ S VDS=10V, ID=4A Source-Drain Diode Parameter Forward On Voltage 2 Reverse Recovery Time 2 Reverse Recovery Charge Symbol VDS Trr Qrr Min. _ Typ. _ Max. 1.2 Unit V Test Condition IS=1.7A, VGS=0V. Is= 5A, VGS=0V dl/dt=100A/uS _ _ 34 48 _ _ nS nC Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse widthO 300us, dutycycleO2%. o 3.Surface mounted on 1 in 2 copper pad of FR4 board; 135 C/W when mounted on Min. copper pad. http://www.SeCoSGmbH.com/ Any changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 2 of 7 SSG4575 Elektronische Bauelemente Enhancement Mode Power Mos.FET o N Channel 6A, 60V,RDS(ON) 36m[ P Channel -4.2A, - 60V,RDS(ON) 72m[ Electrical Characteristics P-Channel( Tj=25 C Parameter Drain-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Gate Threshold Voltage Gate-Source Leakage Current Drain-Source Leakage Current (Tj=25 C) Drain-Source Leakage Current (Tj=70 C) Static Drain-Source On-Resistance2 o o Unless otherwise specified) Typ. _ Symbo BVDSS BVDS/ Tj Min. -60 _ Max. _ _ Unit V V/ C V nA uA uA o Test Condition VGS=0V, ID=-250uA Reference to 25 C, ID=-1mA VDS=VGS, ID=-250uA VGS= 20V VDS=-60V,VGS=0 VDS=-48V,VGS=0 VGS=-10V, ID=-4A VGS=-4.5V, ID=-3A o -0.04 _ _ _ _ _ _ VGS(th) IGSS IDSS -1.0 _ _ _ _ -3.0 100 -1 -25 72 88 34 _ _ RDS(ON) Qg Qgs Qgd Td(ON) Tr Td(Off) Tf Ciss Coss Crss Gfs _ _ _ _ _ _ _ _ _ _ _ m [ Total Gate Charge 2 21 5 9 12 6 82 36 1780 157 130 6 Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time 2 Rise Time Turn-off Delay Time Fall Time www..com Input Capacitance Output Capacitance Reverse Transfer Capacitance Forward Transconductance nC ID=-4A VDS=-48V VGS=-4.5V _ _ _ _ VDS=-30V ID=-1A nS VGS=-10V RG=3.3[ RD=30[ 2850 _ _ pF VGS=0V VDS=-25V f=1.0MHz _ _ S VDS=-10V, ID=-4A Source-Drain Diode Parameter Forward On Voltage 2 Reverse Recovery Time 2 Reverse Recovery Charge Symbol VDS Trr Qrr Min. _ Typ. _ Max. -1.2 Unit V Test Condition IS=-1.7A, VGS=0V. Is=-4A, VGS=0V dl/dt=100A/uS _ _ 43 87 _ _ nS nC Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse widthO 300us, dutycycleO2%. o 3.Surface mounted on 1 in 2 copper pad of FR4 board; 135 C/W when mounted on Min. copper pad. http://www.SeCoSGmbH.com/ Any changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 3 of 7 SSG4575 Elektronische Bauelemente Enhancement Mode Power Mos.FET N Channel 6A, 60V,RDS(ON) 36m[ P Channel -4.2A, - 60V,RDS(ON) 72m[ Characteristics Curve N-Channel Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics www..com Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature Fig 5. Forward Characteristics of Reverse Diode http://www.SeCoSGmbH.com/ Fig 6. Gate Threshold Voltage v.s. Junction Temperature Any changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 4 of 7 SSG4575 Elektronische Bauelemente Enhancement Mode Power Mos.FET N Channel 6A, 60V,RDS(ON) 36m[ P Channel -4.2A, - 60V,RDS(ON) 72m[ N-Channel Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics www..com Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance Fig 11. Switching Time Waveform http://www.SeCoSGmbH.com/ Fig 12. Gate Charge Waveform Any changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 5 of 7 SSG4575 Elektronische Bauelemente Enhancement Mode Power Mos.FET N Channel 6A, 60V,RDS(ON) 36m[ P Channel -4.2A, - 60V,RDS(ON) 72m[ P-Channel Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics www..com Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature http://www.SeCoSGmbH.com/ Fig 5. Forward Characteristics of Reverse Diode Fig 6. Gate Threshold Voltage v.s. Junction Temperature Any changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 6 of 7 SSG4575 Elektronische Bauelemente Enhancement Mode Power Mos.FET N Channel 6A, 60V,RDS(ON) 36m[ P Channel -4.2A, - 60V,RDS(ON) 72m[ P-Channel Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics www..com Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform http://www.SeCoSGmbH.com/ Any changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 7 of 7 |
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